? 2009 ixys corporation, all rights reserved g = gate c = collector e = emitter tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c36 a i c90 t c = 90 c20 a i cm t c = 25 c, 1ms 80 a ssoa v ge = 15v, t j = 125 c, r g = 15 i cm = 40 a (rbsoa) clamped inductive load @v ce 1200 v p c t c = 25 c 180 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-220) 1.13/10 nm/lb.in. f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight to-263 2.5 g to-220 3.0 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces ,v ge = 0v 25 a t j = 125 c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 16a, v ge = 15v, note 2 2.7 3.1 v t j = 125 c 2.8 v ds100126(03/09) genx3 tm 1200v igbt preliminary technical information v ces = 1200v i c90 = 20a v ce(sat) 3.1v ixga20n120b3 IXGP20N120B3 high speed low vsat pt igbts 3-20 khz switching features z optimized for low conduction and switching losses z square rbsoa z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z welding machines z inductive heating to-263 (ixga) g e c (tab) to-220 (ixgp) g e c c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixga20n120b3 IXGP20N120B3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 16a, v ce = 10v, note 2 7.5 12.5 s c ies 1070 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 80 pf c res 32 pf q g 51 nc q ge i c = 16a, v ge = 15v, v ce = 0.5 ? v ces 7.4 nc q gc 23 nc t d(on) 16 ns t ri 31 ns e on 0.92 mj t d(off) 150 ns t fi 155 ns e off 0.56 1.00 mj t d(on) 16 ns t ri 45 ns e on 1.60 mj t d(off) 180 ns t fi 540 ns e off 1.63 mj r thjc 0.69 c/w r thck to-220 0.50 c/w inductive load, t j = 25 c i c = 16a, v ge = 15v v ce = 600v, r g = 15 note 1 notes: 1. switching times may increase for v ce (clamp) > 0.5 ? v ces , higher t j or increased r g . 2. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. inductive load, t j = 125 c i c = 16a, v ge = 15v v ce = 600v, r g = 15 note 1 to-263 (ixga) outline pins: 1 - gate 2 - drain to-220 (ixgp) outline
? 2009 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 4 8 12 16 20 24 28 32 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 0 4 8 1216202428 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125oc 0 4 8 12 16 20 24 28 32 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 32a i c = 16a i c = 8a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 32 a t j = 25oc 8 a 16 a fig. 6. input admittance 0 5 10 15 20 25 30 35 40 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = - 40oc 25oc 125oc ixga20n120b3 IXGP20N120B3
ixys reserves the right to change limits, test conditions, and dimensions. ixga20n120b3 IXGP20N120B3 ixys ref: g_20n120b3(4l)03-17-09 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 5 10 15 20 25 30 35 40 45 200 300 400 500 600 700 800 900 1000 1100 1200 1300 v ce - volts i c - amperes t j = 125oc r g = 15 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v ge - volts v ce = 600v i c = 16a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 10 20 30 40 50 60 70 80 90 r g - ohms e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 32a i c = 16a fig. 17. inductive turn-off switching times vs. junction temperature 0 100 200 300 400 500 600 700 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 80 100 120 140 160 180 200 220 240 t d(off) - nanoseconds t f i t d(off) - - - - r g = 15 ? , v ge = 15v v ce = 600v i c = 32a i c = 16a fig. 15. inductive turn-off switching times vs. gate resistance 200 300 400 500 600 700 800 10 20 30 40 50 60 70 80 90 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 t d(off) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 16a i c = 32a fig. 13. inductive switching energy loss vs. collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 10 12 14 16 18 20 22 24 26 28 30 32 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e on - millijoules e off e on - - - - r g = 15 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 e on - millijoules e off e on - - - - r g = 15 ? , v ge = 15v v ce = 600v i c = 32a i c = 16a fig. 16. inductive turn-off switching times vs. collector current 0 100 200 300 400 500 600 700 800 10 12 14 16 18 20 22 24 26 28 30 32 i c - amperes t f i - nanoseconds 100 120 140 160 180 200 220 240 260 t d(off) - nanoseconds t f i t d(off) - - - - r g = 15 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc ixga30n120b3 ixgp30n120b3
ixys reserves the right to change limits, test conditions, and dimensions. ixga20n120b3 IXGP20N120B3 ixys ref: g_20n120b3(4l)03-17-09 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 10 12 14 16 18 20 22 24 26 28 30 32 i c - amperes t r i - nanoseconds 12 14 16 18 20 22 24 26 t d(on) - nanoseconds t r i t d(on) - - - - r g = 15 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 12 14 16 18 20 22 24 26 28 t d(on) - nanoseconds t r i t d(on) - - - - r g = 15 ? , v ge = 15v v ce = 600v i c = 16a i c = 32a fig. 18. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90 r g - ohms t r i - nanoseconds 0 10 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 16a i c = 32a
|
